Abstract - In this work, we studied the effect of temperature on CIGS solar cells as a function of the thickness of the CdS buffer layer. It was found that with an increase in temperature in CIGS-based solar cells (SC), an increase in the acceptor doping concentration occurs in the region where carrier-generation- recombination prevails. It was also established that in solar cells with a thin buffer layer, generationrecombination through interface prevail, and the temperature influences them more.
"Laboratory Experiments To Study The Effect Of Temperature On CIGS Solar Cells,"
Acta of Turin Polytechnic University in Tashkent: Vol. 10
, Article 9.
Available at: https://uzjournals.edu.uz/actattpu/vol10/iss3/9