Acta of Turin Polytechnic University in Tashkent


Abstract - In this work, we studied the effect of temperature on CIGS solar cells as a function of the thickness of the CdS buffer layer. It was found that with an increase in temperature in CIGS-based solar cells (SC), an increase in the acceptor doping concentration occurs in the region where carrier-generation- recombination prevails. It was also established that in solar cells with a thin buffer layer, generationrecombination through interface prevail, and the temperature influences them more.

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