•  
  •  
 

Acta of Turin Polytechnic University in Tashkent

Abstract

Abstract - In this work, we studied the effect of temperature on CIGS solar cells as a function of the thickness of the CdS buffer layer. It was found that with an increase in temperature in CIGS-based solar cells (SC), an increase in the acceptor doping concentration occurs in the region where carrier-generation- recombination prevails. It was also established that in solar cells with a thin buffer layer, generationrecombination through interface prevail, and the temperature influences them more.

Included in

Other Physics Commons

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.