"CONDCTVTY REVERS IN Zn AND S-DOPED Si" by Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev et al.

Acta of Turin Polytechnic University in Tashkent

Article Title

CONDUCTIVITY REVERSAL IN SILICON DOPED WITH S AND Zn

Authors

Abdulaziz Shavkatovich Mavlyanov, PhD, Head of Laboratory, TSTU-affiliated “Uzbekistan-Japan Innovation Center of Youth”, Tashkent, UzbekistanFollow
Nurullo Zikrillayev, Tashkent State Technical UniversityFollow
Maruf Khaqqulov, Tashkent State Technical UniversityFollow
Erkin Khaltursunov, Turin Polytechnic University in TashkentFollow
Farhod Shakarov, Tashkent State Technical UniversityFollow

Abstract

Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.

Recommended Citation

Mavlyanov, Abdulaziz Shavkatovich; Zikrillayev, Nurullo; Khaqqulov, Maruf; Khaltursunov, Erkin; and Shakarov, Farhod (2020) "CONDUCTIVITY REVERSAL IN SILICON DOPED WITH S AND Zn," Acta of Turin Polytechnic University in Tashkent: Vol. 10 : Iss. 3 , Article 1.
Available at: https://uzjournals.edu.uz/actattpu/vol10/iss3/1

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