Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.
Mavlyanov, Abdulaziz Shavkatovich; Zikrillayev, Nurullo; Khaqqulov, Maruf; Khaltursunov, Erkin; and Shakarov, Farhod
"CONDUCTIVITY REVERSAL IN SILICON DOPED WITH S AND Zn,"
Acta of Turin Polytechnic University in Tashkent: Vol. 10
, Article 1.
Available at: https://uzjournals.edu.uz/actattpu/vol10/iss3/1