Acta of Turin Polytechnic University in Tashkent


Based on the chemical elements of group IV,the charge state and proximity of the covalent radii of the molecules of the solution-forming components, the possibility of the formation of substitutional solid solutions, such as: Si1 − xGex, Si1 − x Snx, (Si2) 1 − x (SnC) x, is predicted , Ge1 - x Snx,(Ge2)1 - x(SiSn)x,(SiC)1 - x(GeC)x,(GeC)1 - x(SnC)x,(SiGe) 1 - x (SnC) x. Single-crystal films of the substitutional solid solution Niy (Si1-xGex) 1-y (0 ≤ x ≤ 0. 25) were grown on substrates of a bulk single-crystal Si1-xGex by solid-state reaction during annealing under a vacuum condition of 10-7-10-8torr. X-ray diffraction patterns, spectral photosensitivity, and current-voltage characteristics of the obtained p/Si1-xGex - n / Niy (Si1-xGex) 1-y heterostructures were studied. The lattice parameters of the epitaxial film are obtained af = 5.4451323 and the substrate as = 5. 6561. The spectral photosensitivity of p / Si1-xGex - n / Niy (Si1-xGex) 1-y 5heterostructures covers a photon energy range from 0.9 to 2.5 eV. It is shown that the direct branch of the current – voltage characteristics of the studied structures at low voltages (up to 0.5 V) is described by the exponential dependence I = I0 exp (qV / ckT), and at large (V> 0.5 V) the power dependence I ∝ Vα, с values: α = 2 for V = (0. 5−0. 9) V, α = 1. 3 for V = (0. 9−1. 4) V and α = 2 for V> 1.4 V. The experimental results are explained based on the double injection model for the n – p – p structure using the drift mechanism of current transfer in the ohmic relaxation mode, taking into account the inertia of the electron exchange inside the recombination complex.



To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.